Product Datasheet Search Results:

2N6756.pdf5 Pages, 138 KB, Scan
2N6756
Fairchild Semiconductor
N-Channel Power MOSFETs, 14 A, 60 A/100 V
2N6756.pdf19 Pages, 625 KB, Original
2N6756
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
2N6756J.pdf1 Pages, 41 KB, Scan
2N6756J
Motorola
European Master Selection Guide 1986
2N6756JTX.pdf1 Pages, 41 KB, Scan
2N6756JTX
Motorola
European Master Selection Guide 1986
2N6756JTXV.pdf1 Pages, 41 KB, Scan
2N6756JTXV
Motorola
European Master Selection Guide 1986

Product Details Search Results:

Dla.mil/2N6756+JAN
{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...
1279 Bytes - 22:58:44, 07 December 2024
Dla.mil/2N6756+JANTX
{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...
1292 Bytes - 22:58:44, 07 December 2024
Dla.mil/2N6756+JANTXV
{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...
1298 Bytes - 22:58:44, 07 December 2024
Infineon.com/2N6756
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1443 Bytes - 22:58:44, 07 December 2024
Infineon.com/JANTX2N6756
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"75(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1478 Bytes - 22:58:44, 07 December 2024
Irf.com/2N6756
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transisto...
1396 Bytes - 22:58:44, 07 December 2024
Irf.com/2N6756JANTX
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1429 Bytes - 22:58:44, 07 December 2024
Irf.com/2N6756JANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...
1434 Bytes - 22:58:44, 07 December 2024
Irf.com/2N6756PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1471 Bytes - 22:58:44, 07 December 2024
Irf.com/JANTX2N6756
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1515 Bytes - 22:58:44, 07 December 2024
Irf.com/JANTXV2N6756
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1515 Bytes - 22:58:44, 07 December 2024
Microsemi.com/2N6756
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"210 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u0...
1543 Bytes - 22:58:44, 07 December 2024

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