Product Datasheet Search Results:

2N1016B.pdf1 Pages, 48 KB, Scan
2N1016B
Api Electronics Group
7.5 A, 100 V, NPN, Si, POWER TRANSISTOR
JAN2N1016B.pdf1 Pages, 48 KB, Scan
JAN2N1016B
Api Electronics Group
7.5 A, 100 V, NPN, Si, POWER TRANSISTOR
2N1016B+JAN.pdf9 Pages, 273 KB, Scan
2N1016B+JAN
Defense Energy Support Center
NPN Silicon High Power Transistors
2N1016B.pdf1 Pages, 70 KB, Scan
2N1016B
Silicon Transistor Corp.
Industrial Grade NPN Power Transistors
2N1016B.pdf1 Pages, 80 KB, Scan
2N1016B
Motorola
Motorola Semiconductor Datasheet Library
2N1016B.pdf1 Pages, 91 KB, Scan
2N1016B
N/a
Shortform Transistor Datasheet Guide
2N1016B/M.pdf2 Pages, 195 KB, Scan
2N1016B/M
N/a
Discontinued Transistor Data Book 1975
JAN2N1016B.pdf1 Pages, 158 KB, Scan
JAN2N1016B
N/a
Shortform Transistor PDF Datasheet
2N1016B.pdf1 Pages, 54 KB, Scan
2N1016B
Pirgo Electronics, Inc.
Power Transistors in TO-82

Product Details Search Results:

Apitech.com/2N1016B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-82, 2 PIN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"100 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"7.5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE PO...
1241 Bytes - 07:03:48, 01 November 2024
Apitech.com/JAN2N1016B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-82, 2 PIN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"100 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"7.5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE PO...
1256 Bytes - 07:03:48, 01 November 2024
Dla.mil/2N1016B+JAN
{"@I(C) (A) (Test Condition)":"5.0","I(CBO) Max. (A)":"20m","Absolute Max. Power Diss. (W)":"150","I(C) Abs.(A) Collector Current":"7.5","t(f) Max. (s) Fall time.":"20u","@V(CE) (V) (Test Condition)":"4.0","f(T) Min. (Hz) Transition Freq":"20k","t(on) Max. (s) Turn-On Time":"6.0u","V(BR)CEO (V)":"100","@V(CBO) (V) (Test Condition)":"100","Military":"Y","h(FE) Min. Static Current Gain":"10","Package":"TO-82","Mil Number":"JAN2N1016B"}...
951 Bytes - 07:03:48, 01 November 2024
Microsemi.com/JAN2N1016B
{"Category":"Discrete Semiconductor Products","Series":"*","Other Names":"1086-16070","Family":"Transistors (BJT) - Single","Standard Package":"1"}...
894 Bytes - 07:03:48, 01 November 2024
Pwrx.com/2N1016B/M
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","I(CBO) Max. (A)":"1.0m","Absolute Max. Power Diss. (W)":"150","I(C) Abs.(A) Collector Current":"7.5","h(FE) Max. Current gain.":"35","@V(CE) (V) (Test Condition)":"4.0","f(T) Min. (Hz) Transition Freq":"30k","t(on) Max. (s) Turn-On Time":"6.0u","V(BR)CEO (V)":"100","Package":"N/A","h(FE) Min. Static Current Gain":"10","V(BR)CBO (V)":"100","Military":"N"}...
923 Bytes - 07:03:48, 01 November 2024
Various/2N1016B
{"@I(C) (A) (Test Condition)":"5.0","I(CBO) Max. (A)":"20m","Absolute Max. Power Diss. (W)":"150","I(C) Abs.(A) Collector Current":"7.5","t(f) Max. (s) Fall time.":"20u","@V(CE) (V) (Test Condition)":"4.0","f(T) Min. (Hz) Transition Freq":"20k","t(on) Max. (s) Turn-On Time":"6.0u","V(BR)CEO (V)":"100","@V(CBO) (V) (Test Condition)":"100","Military":"N","h(FE) Min. Static Current Gain":"10","Package":"TO-82"}...
856 Bytes - 07:03:48, 01 November 2024

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