Product Datasheet Search Results:
- 2N7002
- American Microsemiconductor, Inc.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
- AP2N7002K
- Advanced Power Electronics Corp. Usa
- 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- AP2N7002K-HF
- Advanced Power Electronics Corp. Usa
- 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002
- Calogic, Llc
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- X2N7002
- Calogic, Llc
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002BK
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002BKLEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002LEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002 TR
- Central Semiconductor
- MOSFET N-Ch 60V .2A
- 2N7002TR
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Americanmicrosemi.com/2N7002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-236AB, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1150 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source...
1345 Bytes - 16:17:11, 04 October 2024
A-power.com.tw/AP2N7002K
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.4500 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":...
1421 Bytes - 16:17:11, 04 October 2024
A-power.com.tw/AP2N7002K-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"SMALL OUTLINE","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Conf...
1412 Bytes - 16:17:11, 04 October 2024
Calogic.net/2N7002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V...
1405 Bytes - 16:17:11, 04 October 2024
Calogic.net/X2N7002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tr...
1406 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...
1459 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002 BK
{"Product Category":"MOSFET","Series":"2N7002","Brand":"Central Semiconductor","Packaging":"Bulk","RoHS":"Details","Manufacturer":"Central Semiconductor"}...
1121 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002BK
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...
1430 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002BKLEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1526 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1557 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002 TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23 SERIES SOT-23","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","RoHS Information":"RoHS Declaration of Compliance"...
1801 Bytes - 16:17:11, 04 October 2024
Centralsemi.com/2N7002TR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...
1429 Bytes - 16:17:11, 04 October 2024